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Item # 332
SMD MOSFET Transistor
30V 4.1A P-Channel MOSFET
Low on-resistance Package type: SOT-23
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Description: The CJ3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.
Maximum drain-source voltage VDS : -30 V
Maximum gate-source voltage VGS : ±20 V
Maximum continuous drain current ID : -4.1 A
Maximum power dissipation PD : 350 mW
Maximum Junction Temperature TJ: 150 ℃
Drain-source on-resistance:
@ (VGS =-10V , ID=-4.1A): 60 mΩ
@ (VGS=-4.5V , ID=-3A) : 87 mΩ
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