Description: NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
Features:
* Collector Emitter Voltage (Vceo): 40 V
* Collector Base Voltage (Vcbo): 75 V
* Emitter Base Voltage (Vebo): 6 V
* Collector Current (Ic): 600 mA
* Power Dissipation (Ptot): 625 mW
* Junction Temperature (Tj): -55 ~ 150 °C
* Type: NPN