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CJ3407  P-Channel MOSFET transistor
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Item # 332
SMD MOSFET Transistor
30V  4.1A  P-Channel MOSFET
Low on-resistance 
Package type: SOT-23
Description: The CJ3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

Maximum drain-source voltage  VDS : -30 V
Maximum gate-source voltage  VGS : ±20 V
Maximum continuous drain current  I:  -4.1 A
Maximum power dissipation P: 350 mW
Maximum Junction Temperature TJ: 150 ℃

Drain-source on-resistance:
 @ (VGS =-10V , ID=-4.1A):  60 mΩ
 @ (VGS=-4.5V , ID=-3A) : 87 mΩ

Marking Code: 3407
Documents & Files:
CJ3407.pdf
Datasheet
Manufacturer website: [Click here]
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Quantity:
Price:
$0.08  USD
per Unit