|
Item # 330
AO3401 P-Channel MOSFET transistor. VDS : -30 V ID : -4.0 APackage type: SOT-23
|
Description: The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Maximum drain-source voltage VDS : -30 V Maximum gate-source voltage VGS : ±12 V Maximum continuous drain current ID : -4.0 A Maximum power dissipation PD : 1.4 W Junction and Storage Temperature Range: -55 to 150 °C
Drain-source on-resistance: at (VGS =-10V): < 50 mΩ at (VGS=-4.5V) : < 60 mΩ at (VGS=-2.5V): < 85 mΩ
|
|